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Recently, an increasing attention is focused on the role of silicon in the improvement of plant tolerance to biotic and abiotic stresses. Salinity and drought are important constraints limiting plant growth and yield. Therefore, the main objective of this study was to compare the response of two maize cultivars (KB 1902, KB 1903) to the osmotic stress (induced by 50 mmol∙dm-3 NaCl or 6% PEG - polyethylene glycol) and to investigate the possible ability of silicon (1 mmol∙dm-3 H4SiO4) in mitigating the adverse effects of osmotic stress. The experiments were conducted on 7-day old seedlings grown in hydroponic culture. The obtained results showed that both maize cultivars are very susceptible to osmotic stress. All the examined growth parameters were significantly reduced under stress conditions. Si supply an increased dry matter of shoots and roots of maize cv. KB 1903, however, this positive response did not occur under stress conditions. The exceptions were roots of maize growing in nutrient solution containing NaCl and silicon, their dry matter was 38% higher as compared to NaCl alone. In the case of KB 1902 cv. silicon added to the nutrient solution containing PEG caused approximately 33 and 23% increase in fresh and dry matter of roots in comparison to the PEG treatment alone. Changes in water content in both maize cultivars were relatively small and Si did not influence this parameter. Concentrations of photosynthetic pigments and electrolyte leakage were not affected by the examined treatments. Generally, stress conditions caused a decrease in nitrate reductase activity and Si supply under stress conditions caused the stimulation of the enzyme activity in the leaves of KB 1903. In conclusion, both examined maize cultivars are very sensitive to osmotic stress and the addition of Si to the nutrient solution does not mitigate evidently this negative effect.
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