Reciprocal regulation between nitric oxide and vascular endothelial growth factor in angiogenesis

• Autorzy: Kimura H. , Esumi H.
• Języki publikacji: EN

Abstrakty

EN

Physiologically, angiogenesis is tightly regulated, or otherwise it leads to pathologi­cal processes, such as tumors, inflammatory diseases, gynecological diseases and dia­betic retinopathy. The vascular endothelial growth factor (VEGF) is a potent and criti­cal inducer of angiogenesis. The VEGF gene expression is regulated by a variety of stimuli. Hypoxia is one of the most potent inducers of the VEGF expression. The hypoxia inducible factor 1 (HIF-1) plays as a key transcription factor in hypo- xia-mediated VEGF gene upregulation. Nitric oxide (NO) as well as hypoxia is re­ported to upregulate the VEGF gene by enhancing HIF-1 activity. The Akt/protein kinase B (PKB) pathway may be involved in NO-mediated HIF-1 activation in limited cell lines. There are some reports of negative effects of NO on HIF-1 and VEGF activ­ity. These conflicting data of NO effects may be attributed mainly to the amount of re­leased NO. Indeed, NO can be a positive or negative modulator of the VEGF gene un­der the same conditions simply by changing its amounts. The VEGF-mediated angiogenesis requires NO production from activated endothelial NO synthase (eNOS). Activation of eNOS by VEGF involves several pathways including Akt/PKB, Ca2+ /calmodulin, and protein kinase C. The NO-mediated VEGF expression can be regulated by HIF-1 and heme oxygenase 1 (HO-1) activity, and the VEGF-mediated NO production by eNOS can be also modulated by HIF-1 and HO-1 activity, depending upon the amount of produced NO. These reciprocal relations between NO and VEGF may contribute to regulated angiogenesis in normal tissues.

Słowa kluczowe

EN

hypoxia inducible factor-1; nitric oxide; angiogenesis; hypoxia; growth factor; vascular endothelial growth factor; reciprocal regulation

• Wydawca: -
• Czasopismo: Acta Biochimica Polonica
• Rocznik: 2003
• Tom: 50
• Numer: 1
• Opis fizyczny: p.49-59,fig.

Twórcy

autor

Kimura H.

• Center Research Institute East, Chiba, 277-8577, Japan

autor

Esumi H.

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