Impact of the etching time and current density on Capacitance-Voltage characteristics of P-type of porous silicon

• Autorzy: Hadi H.A. , Abood T.H. , Mohi A.T. , Karim M.S.
• Języki publikacji: EN

Abstrakty

EN

• Wydawca: -
• Czasopismo: World Scientific News
• Rocznik: 2017
• Tom: 67
• Numer: 2
• Opis fizyczny: p.149-160,fig.,ref.

Twórcy

autor

Hadi H.A.

• Department of Physics, College of Education, Al-Mustanseriyah University, Baghdad, Iraq

autor

Abood T.H.

• Department of Physics, College of Education, Al-Mustanseriyah University, Baghdad, Iraq

autor

Mohi A.T.

• Department of Physics, College of Education, Al-Mustanseriyah University, Baghdad, Iraq

autor

Karim M.S.

• Department of Physics, College of Education, Al-Mustanseriyah University, Baghdad, Iraq